22 February 2001 Polishing of InSb in K2Cr2O7-HBr-HCl (oxalic acid) solutions
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417801
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Dissolution of InAs in the K2Cr2O7-HBr-HCl (oxalic acid) solutions is studied in reproducible hydrodynamics conditions. The surfaces of equal etching rate are constructed using mathematical planning of experiment, and the limiting stages of the dissolution process are determined. The kinetic behavior of indicated semiconductors depending on the mixing rate and temperature of solution was investigated and it was shown that the dissolution of these semiconductor compounds in the solutions of the investigated systems is limited by the diffusion stages. The dissolution rates of InSb in such solutions distinguish weakly from each other and are within the interval of 0.5 - 6 micrometer/min. The solutions of K2Cr2O7-HBr-HCl (oxalic acid) systems can be employed for the developing of polishing solutions for the indium antimonide treatment with small etching rate.
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V. N. Tomashik, V. N. Tomashik, N. V. Kusiak, N. V. Kusiak, Z. F. Tomashik, Z. F. Tomashik, S. G. Danylenko, S. G. Danylenko, } "Polishing of InSb in K2Cr2O7-HBr-HCl (oxalic acid) solutions", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417801; https://doi.org/10.1117/12.417801
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