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22 February 2001 Positive persistent photoconductivity in p-type Al0,5Ga0,5As/GaAs/Al0,5Ga0,5As
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417804
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Illumination of a double (formula available in paper) As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterized by about 1.5 increase of a two-dimensional hole concentration. This metastable state may be explained in a frame work of the model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Kraak, N. Ya. Minina, A. M. Savin, E. V. Bogdanov, A. A. Ilievsky, C. B. Sorensen, and Ole Per Hansen "Positive persistent photoconductivity in p-type Al0,5Ga0,5As/GaAs/Al0,5Ga0,5As", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417804
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