22 February 2001 Spectral responsivity of HgMnTe photodiodes
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417768
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
Photodiodes with p-n junctions formed by ion etching of p-Hg1-xMnxTe (x approximately equals 0.1) are reported. The absorption curves of the crystals found from optical measurements are treated within the Kane theory for semiconductors with highly nonparabolic energy bands. The diode responsivity spectra are interpreted in the framework of model taking into account the generation of photocarriers in -regions as well as in the depletion layer. The diode photoresponsivity in the region of the photon energies below semiconductor bandgap is shown to be caused by the gentle slope of the observed absorption edge.
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Weiguo Sun, Weiguo Sun, Ilary M. Rarenko, Ilary M. Rarenko, Sergey E. Ostapov, Sergey E. Ostapov, Leonid A. Kosyachenko, Leonid A. Kosyachenko, } "Spectral responsivity of HgMnTe photodiodes", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417768; https://doi.org/10.1117/12.417768
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