22 February 2001 Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method
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Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417778
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine
Abstract
The procedure of Rutherford backscattering spectrometry (RBS) is worked out for following goals: firstly, investigation of stoichiometry damages of semiconductor subsurface layer after various methods of treatment; secondly, investigation the depth distribution of the components in semiconductor- insulator transition layer; thirdly, determination of components concentration in anodic oxide and transition layer depth. Taking into account the special features of the narrow- gap semiconductor-insulator structures we chose the optimum ion type and energy, scattering geometry, admission time of spectrum to except the heating, radiation damage and composition stoichiometry variation. With the RBS we have carried out the extensive investigations of influence of surface handling conditions, anode oxidation regimes on the properties of the metal-insulator-semiconductor (MIS) structures on the base of the narrow-gap semiconductors such as HgCdTe (MCT), HgMnTe (MMT) and HgZnTe (MZT) having various compositions and electric parameters.
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Aleksander V. Voitsekhovskii, O. G. Lanskaya, E. P. Lilenko, "Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417778; https://doi.org/10.1117/12.417778
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