Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films

Elena I. Rogacheva; Olga N. Nashchekina; Irina A. Korzh; Lidiya G. Voinova; Igor M. Krivulkin

doi:10.1117/12.417781

22 February 2001 Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films

Elena I. Rogacheva, Olga N. Nashchekina, Irina A. Korzh, Lidiya G. Voinova, Igor M. Krivulkin

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417781
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The temperature dependences of electrical resistivity (rho) and thermoelectric power S for the SnTe polycrystalline thin films with charge carrier concentration of (3 - 5)(DOT)10²¹ cm^-3 have been obtained in the range of 80 - 300 K. It was established that the (rho) (T) and S (T) dependences had non-monotonous character. In the temperature range of (80 - 150) K series of peculiarities in the form of steps and plateaux were observed most distinctly. Assumptions about the nature of these anomalies were made. The possible reasons for appearance of numerous temperature peculiarities are system's passing through different quantum states; the processes of self-organization taking place in an open system (heated thin film) at definite levels of excitation (certain temperatures); microdomain structure of thin films; relaxation processes. The pronounced anomalies observed in the temperature ranges of 135 - 150 and 190 - 200 K were attributed to phase transitions caused by redistribution of non-stoichiometric defects.

Citation Download Citation

Elena I. Rogacheva, Olga N. Nashchekina, Irina A. Korzh, Lidiya G. Voinova, and Igor M. Krivulkin "Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417781

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