7 March 2001 Design and stabilization of the extended-cavity semiconductor laser
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Proceedings Volume 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; (2001) https://doi.org/10.1117/12.417845
Event: 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2000, Velke Losiny, Czech Republic
Abstract
We present a tunable extended-cavity semiconductor laser system based on the Littman configuration emitting in the visible region of spectra with the wavelength close to the 633 nm of He-Ne lasers. It has been frequency stabilized to Doppler free hyperfine transmission in molecular iodine. The stability was measured compared to the reference He-Ne-I2 laser system, the present most commonly used laser primary standard. While the semiconductor laser was locked on components of the P(33) 6-3 transmission close enough to the reference R(127) 11-5 line to arrange a beat frequency counting. A relative stability of 4 by 10-12 over a 100 s integration time was achieved. The laser configuration allowed a mode-hop free tuning over a range including a group of strong overlapping transitions R(60) 8-4, R(125) 9- 4 and P(54) 8-4 with higher signal-to-noise ratio.
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Josef Lazar, Josef Lazar, Ondrej Cip, Ondrej Cip, Petr Jedlicka, Petr Jedlicka, } "Design and stabilization of the extended-cavity semiconductor laser", Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); doi: 10.1117/12.417845; https://doi.org/10.1117/12.417845
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