15 March 2001 Holographic properties of dielectric crystals and amorphous semiconductor films
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Proceedings Volume 4358, Optics of Crystals; (2001) https://doi.org/10.1117/12.418883
Event: Optics of Crystals, 2000, Mozyr, Belarus
Abstract
Holographic recording properties and mechanisms are analyzed and compared in dielectric electrooptic crystals (EOC), dielectric colored alkali halide crystals (AHC) and amorphous semiconductor films (ASF) basing on author's investigations as well as on the literature data. Holographic photosensitivity parameters are introduced enabling the characterization of the recording mechanism efficiency independently of the particular optical and geometrical sample parameters, and allowing also for recording optimization. Ultimate specific recording energies for EOC, AHC and ASF are theoretically estimated. It is concluded that the ultimate recording energy for both crystalline and amorphous materials is of order of about 10-6(cm2%). Now the best holographic parameters for the scalar hologram recording are achieved in EOC. Then come ASF and AHC. Yet AHC so far are superior at vector hologram recording. Finally, the conclusion is made that ASF can become serious rivals of EOC in holography and optical information processing if other material properties are taken into account such as hologram lifetime, sample size and cost, hologram self-enhancement possibilities.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andris O. Ozols, Andris O. Ozols, Mara J. Reinfelde, Mara J. Reinfelde, } "Holographic properties of dielectric crystals and amorphous semiconductor films", Proc. SPIE 4358, Optics of Crystals, (15 March 2001); doi: 10.1117/12.418883; https://doi.org/10.1117/12.418883
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