10 October 2001 Determination of hole diffusion length in n-InSb at 80 K
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Abstract
Characterization of variable area InSb photodiode arrays as well as electron beam induced current (EBIC) measurements of InSb p-n junction have been carried out. The lateral collection length of the diode was deduced to be 35-38 μm for InSb substrate with electron concentration of 0.5 - 1x1015 cm-3. EBIC linescans of the diode cross- section yielded same values. Simulations of EBIC profiles of plan view scans at different electron beam voltages across the diode edge yielded diffusion length of 32-38 μm for different diodes. These results show that for FPA design and fabrication the reasonable value of diffusion length in n-InSb at 80 K should be 32-38μm.
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Bo-Liang Chen, Bo-Liang Chen, Yueqing Zhang, Yueqing Zhang, Xiaoming Fang, Xiaoming Fang, Juncao Lin, Juncao Lin, } "Determination of hole diffusion length in n-InSb at 80 K", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); doi: 10.1117/12.445309; https://doi.org/10.1117/12.445309
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