Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 um

Eric Mottin; Jean-Luc Martin; Jean-Louis Ouvrier-Buffet; Michel Vilain; Astrid Bain; Jean-Jacques Yon; Jean-Luc Tissot; Jean-Pierre Chatard

doi:10.1117/12.445293

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10 October 2001 Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm

Eric Mottin, Jean-Luc Martin, Jean-Louis Ouvrier-Buffet, Michel Vilain, Astrid Bain, Jean-Jacques Yon, Jean-Luc Tissot, Jean-Pierre Chatard

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Proceedings Volume 4369, Infrared Technology and Applications XXVII; (2001) https://doi.org/10.1117/12.445293
Event: Aerospace/Defense Sensing, Simulation, and Controls, 2001, Orlando, FL, United States

Abstract

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

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Eric Mottin, Jean-Luc Martin, Jean-Louis Ouvrier-Buffet, Michel Vilain, Astrid Bain, Jean-Jacques Yon, Jean-Luc Tissot, and Jean-Pierre Chatard "Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); https://doi.org/10.1117/12.445293

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