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10 October 2001 YBaCuO uncooled microbolometer IRFPA
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Abstract
Because the semiconducting YBaCuO films which are fabricated by sputtering have a temperature coefficient of resistance (TCR) over 3%/K at room temperature, they are considered to be candidates for bolometer materials of uncooled infrared (IR) detectors. There is a problem, however, in that the resistivity of the films is over 10 (Omega) cm, which is two orders of magnitude higher than that of conventional VOX bolometer films. To decrease the resistance of the bolometers, we researched sputtering conditions of the YBaCuO films and combined them with comb-shaped electrodes. When the YBaCuO film was deposited on these electrodes by RF magnetron sputtering at room temperature in an atmosphere of 2% O2 and 98% Ar, it showed a resistivity of 90 Ωcm and a TCR of -3.2%/K; ultimately the YBaCuO bolometer resistance became 82 k(Omega) using the comb-shaped electrodes. The YBaCuO bolometer detector that contains an infrared absorbing membrane achieved a high fill factor of 90% and high infrared absorptance of 79%. Moreover, the detector showed a thermal conductance of 1.3x10-7 W/K and a responsivity of 6.8x105 V/W in a vacuum. The YBaCuO microbolometer FPA which we have developed has an array format of 320x240 pixels and a pixel pitch of 40 μm. The FPA showed a noise equivalent temperature difference (NETD) of 0.08 K with a prototype camera and f/1.0 optics.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Wada, Takanori Sone, Hisatoshi Hata, Yoshiyuki Nakaki, Osamu Kaneda, Yasuaki Ohta, Masashi Ueno, and Masafumi Kimata "YBaCuO uncooled microbolometer IRFPA", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); https://doi.org/10.1117/12.445342
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