19 September 2001 Novel focal plane array integration technology for use in eye-safe imaging ladar receivers
Author Affiliations +
A novel integration technology for the fabrication of active, or passive, focal plane array imagers has been developed. The integration scheme is based on the transfer of epitaxial layers to a surrogate substrate without critical alignment. Once the epitaxial layer is successfully transferred to the surrogate substrate, photodetector isolation, passivation, and fabrication are completed. To demonstrate the potential of the process, 320 x 256 arrays of InGaAs mesas were successfully transferred onto commercially-available focal plane array readout integrated circuits. Pitch and pixel resolution are limited by the available standard photolithography. InGaAs mesas transferred to silicon wafers with a pitch as small as 10 microns have been demonstrated. The process was optimized for the fabrication of high-performance vertical Schottky photodiodes. Dark-currents below 5 nA were observed with 44 mm diameter photodiodes. Responsivities of 0.55 A/W were obtained with a 1 micron InGaAs absorber. The new integration process can be used to easily achieve photodiodes with bandwidths higher than 20 GHz, without the use of an air-bridge.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth Vaccaro, Kenneth Vaccaro, Stephen M. Spaziani, Stephen M. Spaziani, Helen M. Dauplaise, Helen M. Dauplaise, Darlene Schwall, Darlene Schwall, Mark Roland, Mark Roland, James E. Murguia, James E. Murguia, Joseph P. Lorenzo, Joseph P. Lorenzo, } "Novel focal plane array integration technology for use in eye-safe imaging ladar receivers", Proc. SPIE 4377, Laser Radar Technology and Applications VI, (19 September 2001); doi: 10.1117/12.440099; https://doi.org/10.1117/12.440099


InGaAs focal plane array developments and perspectives
Proceedings of SPIE (October 07 2014)
High-density hybrid interconnect technologies
Proceedings of SPIE (September 08 2004)
State of the art in large format IR FPA development...
Proceedings of SPIE (October 10 2003)
Silicon p-i-n focal plane arrays at Raytheon
Proceedings of SPIE (September 03 2008)

Back to Top