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26 November 1983 Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes
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Abstract
Low threshold 6 - 15 m range lead salt diode lasers have been fabricated from closely lattice-matched PbSnSeTe-PbSeTe double-heterostructure layers grown on PbSnTe or PbTe substrates by liquid phase epitaxy. Temperature dependence of threshold current density and injected carrier lifetimes have been measured for variously doped PbSnSeTe active region lasers. Very low threshold current densities at low temperatures were obtained for compensated active region lasers. For 1 Ltm thick Bi-Tl doped active region lasers, the threshold current densities of 40 - 50 A/cm2 and 200 -250 A/cm2 at 4.2 K and 77 K, respectively, were very reproducibly obtained. The lowest observed threshold was 21 A/cm2 at 4.2 K. These results were used to discuss the factors determining the threshold current density and the highest operating temperatures.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiji Horikoshi "Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937423
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