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9 April 2001 Aspects in HTS laser ablation thin film technology and characterization
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Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425154
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria
Abstract
Thin films of YBa2Cu3O7-x have been obtained on NdGaO3 substrate by pulsed laser deposition with an excimer KrF* ((lambda) equals 248 nm, (tau) FWHM>= 20 ns laser source from a stoichiometric target. In the present paper we report details of the technology of pulsed laser deposition of high-temperature superconductor thin films, substrates' requirements and high-temperature superconductor thin film characterization. The study of some parameters' intercorrelations for optimization of the technology of the pulsed laser deposition of high-temperature superconductor thin films is also analyzed. Moreover, the contacting technology and techniques of characterization are described.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Branescu, Eniko Gyorgy, Carmen Ristoscu, Ion N. Mihailescu, J. Jaklovsky, and V. Mihalache "Aspects in HTS laser ablation thin film technology and characterization", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); https://doi.org/10.1117/12.425154
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