9 April 2001 Theoretical and experimental parametric study of the synthesis process of TiN by reactive pulsed laser deposition
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Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425152
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria
Abstract
We report a theoretical and experimental comprehensive study of the synthesis of TiN by RPLD from Ti targets in (0.2 - 50) Pa nitrogen. We used an UV XeCl* excimer laser source ((lambda) equals 308 nm, (tau) FWHM<EQ 30 ns). The deposited structures were characterized by electron microscopy, XPS and RBS. We observed a tight interval of the ambient gas pressure of (0.7 - 7) Pa within we deposited stoichiometric, polycrystalline TiN films. The theoretical analysis was performed with a numerical multifluid code using the 1D heat- conduction equation. The transit of the ablated material from target to collector was treated by a Monte-Carlo method. Finally, the thickness profile of the deposited films was predicted. The obtained results are in good accordance with experimental measurements.
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Johny Neamtu, Carmen Ristoscu, Ion N. Mihailescu, "Theoretical and experimental parametric study of the synthesis process of TiN by reactive pulsed laser deposition", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); doi: 10.1117/12.425152; https://doi.org/10.1117/12.425152
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