9 April 2001 Theoretical and experimental parametric study of the synthesis process of TiN by reactive pulsed laser deposition
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Proceedings Volume 4397, 11th International School on Quantum Electronics: Laser Physics and Applications; (2001) https://doi.org/10.1117/12.425152
Event: 11th International School on Quantum Electronics: Laser Physics and Applications, 2000, Varna, Bulgaria
Abstract
We report a theoretical and experimental comprehensive study of the synthesis of TiN by RPLD from Ti targets in (0.2 - 50) Pa nitrogen. We used an UV XeCl* excimer laser source ((lambda) equals 308 nm, (tau) FWHM<EQ 30 ns). The deposited structures were characterized by electron microscopy, XPS and RBS. We observed a tight interval of the ambient gas pressure of (0.7 - 7) Pa within we deposited stoichiometric, polycrystalline TiN films. The theoretical analysis was performed with a numerical multifluid code using the 1D heat- conduction equation. The transit of the ablated material from target to collector was treated by a Monte-Carlo method. Finally, the thickness profile of the deposited films was predicted. The obtained results are in good accordance with experimental measurements.
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Johny Neamtu, Johny Neamtu, Carmen Ristoscu, Carmen Ristoscu, Ion N. Mihailescu, Ion N. Mihailescu, } "Theoretical and experimental parametric study of the synthesis process of TiN by reactive pulsed laser deposition", Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); doi: 10.1117/12.425152; https://doi.org/10.1117/12.425152
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