26 April 2001 0.11-μm imaging in KrF lithography using dipole illumination
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425215
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Even with increasing numerical apertures and decreasing wavelength sin optical lithography, the practical k1 factor used in IC fabrication will continue to decrease ever closer to the theoretical 0.25 limit. This paper presents result of a feasibility study on 0.11 micrometers imaging with dipole illumination on a 0.70 NA KrF tool using a binary mask. The obvious advantage of dipole illumination techniques is the strong enhancement of exposure latitude (EL) and depth of focus (DOF) for specific dense structures. However, there are also many drawbacks for other feature types and geometries. These must be either avoided or overcome. To deal with these drawbacks int eh best way, detailed knowledge of the unwanted effects is needed. This article deals with two categories of trade-offs that must be considered when applying dipole illumination.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Eurlings, Eelco van Setten, Juan Andres Torres, Mircea V. Dusa, Robert John Socha, Luigi Capodieci, Jo Finders, "0.11-μm imaging in KrF lithography using dipole illumination", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425215; https://doi.org/10.1117/12.425215
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