Aberration control for 70-nm optical lithography

Harry Sewell; James A. McClay; Andrew Guzman; Carlo Lafiandra

doi:10.1117/12.425216

26 April 2001 Aberration control for 70-nm optical lithography

Harry Sewell, James A. McClay, Andrew Guzman, Carlo Lafiandra

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425216
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This paper examines the control of optical aberrations in an advanced step-and-scan system operating at 157 nm wavelength that uses catadioptric projection optics. Optical lithography will need to operate at K-factors approaching 0.33 using 157 nm wavelength with extremely high numerical apertures.

Citation Download Citation

Harry Sewell, James A. McClay, Andrew Guzman, and Carlo Lafiandra "Aberration control for 70-nm optical lithography", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425216

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