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26 April 2001 Automatic calibration of lithography simulation parameters
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001)
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
A method is presented for automatically adjusting the input parameters of a lithography simulator to more accurately match a given set of experimental conditions. Using contrast curves, swing curves or focus-exposure matrices, simulation parameters are automatically modified in a search to minimize the difference between the simulated results and the experimental data. The algorithms used are described, as well as their robustness and sensitivity to experimental noise. Results of these tuning procedures are presented and the tuned set of parameters is shown to give good quantitative agreement of simulation to experiment.
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Sven Jug, Richard Huang, Jeff D. Byers, and Chris A. Mack "Automatic calibration of lithography simulation parameters", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001);

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