26 April 2001 Automatic resist parameter calibration procedure for lithography simulation
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425221
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
The simulation of photolithographic processes depends on accurate resist modeling parameters. In this paper we present an automated fitting procedure which can be applied to arbitrary combinations of experimental data and model parameters. The procedure is applied to a typical i-line process. The resulting models are evaluated with respect to their performance for the full set of experimental data. The correlation of model parameters with certain experimental data is discussed and an optimum automatic parameters extraction procedure for i-line resists is proposed. Finally, we evaluate the extracted parameters by comparing different simulated profiles with cross-section SEM pictures.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernd Tollkuehn, Bernd Tollkuehn, Max J. Hoepfl, Max J. Hoepfl, Andreas Erdmann, Andreas Erdmann, Stefan Majoni, Stefan Majoni, Marion Jess, Marion Jess, } "Automatic resist parameter calibration procedure for lithography simulation", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425221; https://doi.org/10.1117/12.425221

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