26 April 2001 Combined optical and electron beam lithography for integrated circuit fabrication
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425212
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
A direct-write electron beam lithography system has been developed for use in conjunction with optical lithography for device fabrication. The electron beam lithography system comprises a scanning electron microscope to provide the electron beam, an automated pattern alignment system, for accurately aligning the electron beam with the features defined by optical lithography, and a dedicated pattern generator to control the electron beam during exposure. The system is primarily used for fabricating the gate electrodes in high electron mobility transistors which are the active components in monolithic microwave integrated circuits. The high frequency performance of these devices is determined by the size and cross-section profile in the top layers to reduce the gate resistance. The system is able to automatically align the gate electrodes by initially acquiring an image to accurately place the beam prior to exposure. Registration marks are not required and the system is able to automatically compensate for stage positioning errors and fabrication tolerances associated with the placement of the optically defined features.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Grahame C. Rosolen, Grahame C. Rosolen, "Combined optical and electron beam lithography for integrated circuit fabrication", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425212; https://doi.org/10.1117/12.425212
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