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26 April 2001 Critical procedure for OPC software benchmarking with maskshop consideration
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425206
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
To print subwavelength dimension features in optical lithography, one must correct significant Optical Proximity Effects as well as some other process outcomes. Nowadays, different firms propose to Silicon Industry Optical Proximity Correction (OPC) software. This software may be either Rule-based or Model-based or a mixed of both methods. To have the most judicious choice to acquire one of them, we prepare a procedure of evaluation with both mask manufacturing interest and Silicon process concern. The first part of the work is a technical study. We evaluate the OPC generation step in terms of speed, used memory an size evolution of the databases. We add a qualitative evaluation of the correction quality after lithography simulation. The second part of the work is the manufacturability evaluation. The results of the layout, produced by suppliers are analyzed and compared in term of mask complexity, mask resolution and anomalies generated.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandra Barberet, Gerald Galan, Gilles L. Fanget, Jean-Charles Richoilley, Michel Tissier, and Yves Quere "Critical procedure for OPC software benchmarking with maskshop consideration", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425206
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