26 April 2001 MEEF management and the effect of assist feature optical proximity corrections
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425205
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
DUV lithography for 130 nm features requires several resolution enhancement techniques for a robust manufacturing process. These include modified illumination, optical proximity correction and, eventually, phase shift masks. Illumination and mask enhancements improve aerial image quality and serve to maintain that improvement over a suitably larger range of defocus than would otherwise be obtained. The former technique expands process margins most effectively for only the semi-dense through dense pitches of lines and spaces. The more isolated features are unaffected by this approach, so common process latitude is reduced since the overlap of the individual windows is driven apart by the difference of sizing energies of the features. Scattering bars, which are sub-resolution assist features used in OPC for the more isolated features, offset this effect by inducing a diffraction pattern that is more similar to dense lines. The result is enhanced focus latitude for the individual feature and improved common latitude through increased overlap of process windows.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael T. Reilly, Michael T. Reilly, Colin R. Parker, Colin R. Parker, Stewart A. Robertson, Stewart A. Robertson, "MEEF management and the effect of assist feature optical proximity corrections", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425205; https://doi.org/10.1117/12.425205

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