26 April 2001 Measurement and analysis of reticle and wafer-level contributions to total CD variation
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425200
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
The impact of reticle critical dimension (CD) variations on wafer level CD Performance has been growing with the trend towards sub-wavelength lithography. Reticle manufacturing, CD specifications and qualification procedures must now take into account the details of the wafer fab exposure and prices conditions as well as the mask process. The entire pattern transfer procedure, from design to reticle to wafer to electrical result, must be viewed as a system engineering problem. In this paper we show how hardware and software tools, procedures, and analysis techniques are being developed to support the demanding requirements of the pattern transfer process in the era of 0.13 micron lithography.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moshe E. Preil, Chris A. Mack, "Measurement and analysis of reticle and wafer-level contributions to total CD variation", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425200; https://doi.org/10.1117/12.425200
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