26 April 2001 Microstructuring irradiated by 197- and 308-nm excimer laser
Author Affiliations +
Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425224
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
In this paper, the direct ablation of polymer films of PMMA, PI, PC and K9 glass has been studied at wavelength of 193nm and 308nm. The ablation characteristics of microstructuring is mainly discussed and compared. The ablation qualities of PC, PMMA and K9 glass by ArF excimer laser are medium. Smooth surfaces and sharp edges with micron transverse resolution and submicron dep precision can be obtained by the ablation of PI at 308nm, and PI, PC at 193nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qihong Lou, Qihong Lou, Lin Zhang, Lin Zhang, } "Microstructuring irradiated by 197- and 308-nm excimer laser", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425224; https://doi.org/10.1117/12.425224
PROCEEDINGS
4 PAGES


SHARE
RELATED CONTENT

Effective temperatures of polymer laser ablation
Proceedings of SPIE (August 31 1991)
UV-Laser Photoablation Of Polymers
Proceedings of SPIE (April 25 1989)
Positive photoresist ablation with excimer laser
Proceedings of SPIE (September 30 1990)

Back to Top