26 April 2001 Microstructuring irradiated by 197- and 308-nm excimer laser
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425224
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
In this paper, the direct ablation of polymer films of PMMA, PI, PC and K9 glass has been studied at wavelength of 193nm and 308nm. The ablation characteristics of microstructuring is mainly discussed and compared. The ablation qualities of PC, PMMA and K9 glass by ArF excimer laser are medium. Smooth surfaces and sharp edges with micron transverse resolution and submicron dep precision can be obtained by the ablation of PI at 308nm, and PI, PC at 193nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qihong Lou, Qihong Lou, Lin Zhang, Lin Zhang, } "Microstructuring irradiated by 197- and 308-nm excimer laser", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425224; https://doi.org/10.1117/12.425224


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