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26 April 2001 Modifying the surface inhibition layer of thick resists for improved process control
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425229
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
A method allowing full or partial removal of the pronounced surface inhibition layer found in some thick resists is described. Removal of such surface inhibition layer allows the development step to proceed more smoothly thereby improving process control. This modification to the resist process is particularly applicable to thick resist applications such as grey-scale lithography for MEMS.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Graham G. Arthur "Modifying the surface inhibition layer of thick resists for improved process control", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425229
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