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26 April 2001 New instrument to characterize materials and optics for 157-nm lithography
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Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425199
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Spectroscopic ellipsometry has long been recognized as the technique of choice to characterize thin films and multilayers. In 1983, SOPRA developed the first commercial spectroscopic ellipsometer for research and development. Since this date, the wavelength range has been extended from visible to near IR, and far IR up to 18micrometers . For 193nm micro-lithography, deep UV option down to 190nm has also been developed and delivered more recently. Instrumentation for the next generation of VUV lithography at 157nm requires special optical setup since O2 and H2O are extremely absorbing below 190nm. A new system has been developed which works in to a purged glove box to reduce the oxygen and water contamination in the part per million range. The optical setup includes a pre monochromator in the polarizer arm to avoid photo bleaching. The wavelength range of the instrument is 140-700nm. The system works in rotating analyzer configuration to minimize the parasitic residual polarization. Ellipsometric and photometric measurements versus wavelength and angle of incidence can be performed. Scatterometric measurements can also be made. In this wavelength range, the samples are extremely sensitive to any surface contamination and surface roughness. It is why a grazing x-ray option has been added on the same instrument to provide a better picture of the analyzed samples. This paper presents in detail the new system with its two measurement methods, and including experimental results on resist, antireflective coatings and gate dielectrics for use in the field of micro-lithography.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Boher, Patrick Evrard, Jean-Philippe Piel, and Jean-Louis P. Stehle "New instrument to characterize materials and optics for 157-nm lithography", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425199
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