20 April 2001 Structural and acoustic characterization of highly oriented piezoelectric AIN films
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Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001) https://doi.org/10.1117/12.425239
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Aluminum nitride piezoelectric films have been grown by reactive sputtering technique on different substrates, chosen according to their attractive properties such as high acoustic wave velocity (Al2O3, MgO, Si) and possibility to integrate the acoustic device with the electric circuitry (Si, GaAs). We have studied the AlN properties within a thickness range of 2.1 - 6.3 micrometers by means of X-ray diffraction analysis and piezoelectric d33 constants measurements, in order to define the best sputtering parameters that ensure the best quality of the AlN films.
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Cinzia Caliendo, Cinzia Caliendo, P. Imperatori, P. Imperatori, Enrico Verona, Enrico Verona, } "Structural and acoustic characterization of highly oriented piezoelectric AIN films", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425239; https://doi.org/10.1117/12.425239
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