20 April 2001 Use of cooled CCD cameras to control multicharged ion beam processes
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Proceedings Volume 4405, Process and Equipment Control in Microelectronic Manufacturing II; (2001); doi: 10.1117/12.425255
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
We present in this paper a new in-situ technique we have developed to monitor and to control broad ion beam processes. The base of this technique is to capture, with a Peltier-cooled CCD camera, the light emitted when the ions hit the surface of the wafer during the process. The intensity of the light and its distribution across the irradiated area is calculated from the CCD camera picture. In our processes, we measure the intensity level of the light emitted to monitor the growth or the etching of silicon oxide films by ultra slow single and multicharged ions. We also measure the intensity distribution of the light emitted from the irradiated area to control and monitor the broad ion beam uniformity. The possibility to use an in-situ monitoring system is an advantage for the equipment we develop for semiconductor manufacturing, as it will give an immediate control on the quality of every processed wafer.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurence Vallier, Vincent Le Roux, Gilles Borsoni, Michael L. Korwin-Pawlowski, "Use of cooled CCD cameras to control multicharged ion beam processes", Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425255; https://doi.org/10.1117/12.425255
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KEYWORDS
CCD cameras

Ion beams

Beam controllers

Control systems

Ions

Process control

Semiconducting wafers

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