23 April 2001 Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage
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Abstract
The dislocation at the trench corner under Poly mask edges was found to be the major killer of junction leakage in generic logic technology. The impact of the sacrificial oxide (SAC-OX) of the well ion implantation (I/I) module and the source/drain (S/D) I/I to the defect formation are investigated for the first time. The influence on N+/P-Well junction leakage caused by the I/I sacrificial oxide from the Rapid Thermal Oxidation (RTO) and Furnace Oxidation (FO) are evaluated by using the process monitoring test structures. Based on the analysis of test structures and the yield evaluation of product, the optimized condition is proposed.
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Kelvin Yih-Yuh Doong, Kelvin Yih-Yuh Doong, Sheng-che Lin, Sheng-che Lin, Sunnys Hsieh, Sunnys Hsieh, Binson Shen, Binson Shen, Yu-Hao Yang, Yu-Hao Yang, Peter Chen, Peter Chen, Charles Ching-Hsiang Hsu, Charles Ching-Hsiang Hsu, } "Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425269; https://doi.org/10.1117/12.425269
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