23 April 2001 Wafer-level stress data successfully used as early burn-in predictor
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We show that a simple post-stress test can provide a good early reliability indicator. The defect types that have been revealed by this post-stress test are two types of conductive particles on metal levels. This early indicator has been of great value when dealing with potentially contaminated wafers/lots and to evaluate and to prioritize the corrective actions to solve the line issues.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ana Sacedon, Miguel Alonso Merino, Victorino Martin Santamaria, Jesus Inarrea, Francisco J. Sanchez-Vicente, Jesus de la Hoz, Jose Angel Ayucar, Isabel Menendez-Moran, Alvaro Riloba, Carlos Mata, Miguel Recio, "Wafer-level stress data successfully used as early burn-in predictor", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425263; https://doi.org/10.1117/12.425263

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