23 April 2001 Wafer-level stress data successfully used as early burn-in predictor
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Abstract
We show that a simple post-stress test can provide a good early reliability indicator. The defect types that have been revealed by this post-stress test are two types of conductive particles on metal levels. This early indicator has been of great value when dealing with potentially contaminated wafers/lots and to evaluate and to prioritize the corrective actions to solve the line issues.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ana Sacedon, Ana Sacedon, Miguel Alonso Merino, Miguel Alonso Merino, Victorino Martin Santamaria, Victorino Martin Santamaria, Jesus Inarrea, Jesus Inarrea, Francisco J. Sanchez-Vicente, Francisco J. Sanchez-Vicente, Jesus de la Hoz, Jesus de la Hoz, Jose Angel Ayucar, Jose Angel Ayucar, Isabel Menendez-Moran, Isabel Menendez-Moran, Alvaro Riloba, Alvaro Riloba, Carlos Mata, Carlos Mata, Miguel Recio, Miguel Recio, } "Wafer-level stress data successfully used as early burn-in predictor", Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425263; https://doi.org/10.1117/12.425263
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