Comparison of Bosch and cryogenic processes for patterning high-aspect-ratio features in silicon

Martin J. Walker

doi:10.1117/12.425288

30 April 2001 Comparison of Bosch and cryogenic processes for patterning high-aspect-ratio features in silicon

Martin J. Walker

Proceedings Volume 4407, MEMS Design, Fabrication, Characterization, and Packaging; (2001) https://doi.org/10.1117/12.425288
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

This paper compares the two leading techniques for etching deep into silicon, namely the `Bosch' process and a cryogenically cooled process. The Bosch process is introduced first. The process is described in some detail and details are given of particular hardware requirements. Finally, three classes of MEMS process are considered. For each application, relevant aspects of the Bosch process are discussed. Next, we more on to the `cryo' process. Again, this is described, together with hardware requirements. Three applications are presented for this process, with further comments relating to the process performance. Finally, in the conclusion, the two processes are compared and contrasted.

Citation Download Citation

Martin J. Walker "Comparison of Bosch and cryogenic processes for patterning high-aspect-ratio features in silicon", Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); https://doi.org/10.1117/12.425288

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