30 April 2001 Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates
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Proceedings Volume 4407, MEMS Design, Fabrication, Characterization, and Packaging; (2001) https://doi.org/10.1117/12.425331
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom
Abstract
Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cinzia Caliendo, Cinzia Caliendo, Enrico Verona, Enrico Verona, Alessandro Cimmino, Alessandro Cimmino, } "Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates", Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); doi: 10.1117/12.425331; https://doi.org/10.1117/12.425331
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