Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates

Cinzia Caliendo; Enrico Verona; Alessandro Cimmino

doi:10.1117/12.425331

30 April 2001 Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates

Cinzia Caliendo, Enrico Verona, Alessandro Cimmino

Author Affiliations +

Proceedings Volume 4407, MEMS Design, Fabrication, Characterization, and Packaging; (2001) https://doi.org/10.1117/12.425331
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.

Citation Download Citation

Cinzia Caliendo, Enrico Verona, and Alessandro Cimmino "Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates", Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); https://doi.org/10.1117/12.425331

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE