5 April 2001 Behavioral modeling of rf VCO circuit with MEMS LC resonator
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Proceedings Volume 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001; (2001) https://doi.org/10.1117/12.425374
Event: Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, 2001, Cannes-Mandelieu, France
Abstract
In this work, a behavioral Modeling of RF VCO circuit which has a tank designed by Microelectromechanical system (MEMS) technology is presented emphasizing robust design that can obtain the parametric variable of the suspended spiral inductor and the MEMS tunable capacitor to high performance and reliable design of the VCO circuit. The MEMS spiral inductor has a low phase noise effect on the VCO output, and the MEMS tunable capacitance has very high quality factor with enabling 20% change of oscillation frequency. The designed monolithic RF VCO circuit and the high-Q MEMS inductor and tunable capacitor are modeled using specter-s simulator in the CADENCE design framework and (Verilog-A) behavioral simulator. Complete monolithic fabrication of RF VCO with high-Q MEMS devices using standard CMOS process (MOSIS, AMI 1.2 micrometer).
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Amal Mohamed, Hamed Elsimary, Mohammed Ismail, "Behavioral modeling of rf VCO circuit with MEMS LC resonator", Proc. SPIE 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, (5 April 2001); doi: 10.1117/12.425374; https://doi.org/10.1117/12.425374
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