5 April 2001 Design and modeling of a silicon resonant pressure sensor
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Proceedings Volume 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001; (2001) https://doi.org/10.1117/12.425388
Event: Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, 2001, Cannes-Mandelieu, France
Abstract
Modelling of a silicon resonator as a pressure sensor is presented. The resonator is electrothermally excited and the resonance frequency shift is detected by a piezoresistive thin film detector. Computer simulation using commercial MEMS software tool IntelliSuiteTM is compared with analytical model. Various design aspects, such as the pressure sensitivity, electrothermal heating of vibrating beam, influence of detection current and damping effect are investigated. Silicon resonator sensor have been fabricated and measured. The characteristics predicted by computer simulation has been confirmed by experimental results.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zheng Cui, Zheng Cui, Deyong Chen, Deyong Chen, Shanhong Xia, Shanhong Xia, } "Design and modeling of a silicon resonant pressure sensor", Proc. SPIE 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, (5 April 2001); doi: 10.1117/12.425388; https://doi.org/10.1117/12.425388
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