5 April 2001 Thermally excited SiN beam resonant pressure sensor
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Proceedings Volume 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001; (2001); doi: 10.1117/12.425398
Event: Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, 2001, Cannes-Mandelieu, France
Abstract
A new type pressure sensor based upon an electro-thermally driven and piezo-resistively sensed SiN-beam resonator is presented. A finite element analysis (FEA) method is involved to analyze the relationship between the excitation power, thermal stress, applied pressure and the resonant frequencies of the beam. The sensor is fabricated using silicon micro- machined technology and fusion bonding. Measurements yield a fundamental frequency of about 85 kHz and Q-factor of 1000 in air at atmospheric pressure, rising to over 40,000 in high vacuum (<0.01 Pa). A special close-loop detecting technology is employed to measure the response of the resonant frequency at different applied pressure loads. A 0 - 400 kPa sensor has a good linear frequency/pressure relationship. The span is about 10 kHz over the full pressure sweep, and the pressure sensitivity is about 23.8 Hz/kPa.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyong Chen, Dafu Cui, Zhongyao Yu, Li Wang, Zheng Cui, Shanhong Xia, "Thermally excited SiN beam resonant pressure sensor", Proc. SPIE 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, (5 April 2001); doi: 10.1117/12.425398; https://doi.org/10.1117/12.425398
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KEYWORDS
Sensors

Silicon

Resonators

Finite element methods

Resistors

Microelectromechanical systems

Signal detection

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