5 September 2001 Advanced e-beam reticle writing system for next-generation reticle fabrication
Author Affiliations +
Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438405
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
A new advanced e-beam reticle writing system HL-950M has been developed to meet requirements for the production of 130 nm node reticles as well as development of 100 nm node reticles. In order to improve the critical dimension (CD) accuracy and pattern positioning accuracy, several new technologies have been introduced on the basis of the field-proven technologies of the previous system HL-900M. Fine address size is realized by a newly developed control electronics2 that enables the system to handle address unit of 2.5 nm, providing four times higher resolution than HL-900M. Reconstruction of sub-sub-field (SSF) pattern data has been developed so that the same pattern is exposed twice with reconstructed SSF pattern data sets with different SSF boundaries, realizing better stitching and positioning accuracy. High accuracy proximity effect correction has been developed with a new second order proximity effect calculation scheme, providing better CD uniformity particularly against drastic change of the pattern density. As main results of the system evaluation, the global CD accuracy of 9 nm (3(sigma) ) and the global pattern positioning accuracy of 15 nm (3(sigma) ) have been obtained. The overall performance of the HL-950M system has satisfied the specifications required for the 130 nm node reticle production and 100nm node reticle development.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Fujii, Akira Fujii, Kazui Mizuno, Kazui Mizuno, Tetsuji Nakahara, Tetsuji Nakahara, Suyo Asai, Suyo Asai, Yasuhiro Kadowaki, Yasuhiro Kadowaki, Hajime Shimada, Hajime Shimada, Hiroshi Touda, Hiroshi Touda, Ken Iizumi, Ken Iizumi, Hiroyuki Takahashi, Hiroyuki Takahashi, Kazuyoshi Oonuki, Kazuyoshi Oonuki, Toshikazu Kawahara, Toshikazu Kawahara, Katsuhiro Kawasaki, Katsuhiro Kawasaki, Koji Nagata, Koji Nagata, H. Satoh, H. Satoh, } "Advanced e-beam reticle writing system for next-generation reticle fabrication", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438405; https://doi.org/10.1117/12.438405
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Migrating deep UV lithography to the 0.25 um regime ...
Proceedings of SPIE (June 07 1996)
EBES4: mask/reticle writer for the 90's
Proceedings of SPIE (March 01 1991)
Advanced mask and reticle generation using EBES4
Proceedings of SPIE (December 07 1994)
Mask CD uniformity impact during incoming quality control
Proceedings of SPIE (August 16 2002)

Back to Top