5 September 2001 Advantages of using the CAR for photomask manufacturing
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438349
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
This report shows characteristics of the chemical amplified positive-tone resist (CAR) we have developed for 50keV electron beam (E-beam) mask writing system. The CAR includes newly developed polymer. Including the polymer, CD change is negligible small even if exposed mask is left in vacuum for dozens of hour. 0.4, 0.3, 0.2 micrometers L&S resist pattern profiles at a dose of 7.5micrometers C/cm2 and Cr pattern profiles after reactive ion etching are printed. Dependence on PEB temperature is 3.4 nm / degree(s)C. As post coating delay effect (PCD), CD change can not be observed for 53 days. And characteristics of the CAR were compared with that of ZEP7000 (Nippon Zeon Co., Ltd.). Dose latitude of the CAR is about two times of that of the other. Writing time of photomask with the CAR is about half of that the other. Above mentioned, the CAR has ability for photomasks manufacturing. So, we have succeed in making 0.18micrometers design rule photomasks with the CAR and 50keV EB writing system.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takehiro Kondoh, Takehiro Kondoh, Masamitsu Itoh, Masamitsu Itoh, Rikiya Taniguchi, Rikiya Taniguchi, Kyoh Ohtsubo, Kyoh Ohtsubo, Mari Sakai, Mari Sakai, Hidehiro Watanabe, Hidehiro Watanabe, } "Advantages of using the CAR for photomask manufacturing", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438349; https://doi.org/10.1117/12.438349
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