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5 September 2001 CD measurement for next-generation mask
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438378
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
Since higher Critical Dimension (CD) accuracy on mask is required, there is a need to optimize CD definition for lithography. The conventional CD definition is based on the cross-sectional profile of mask pattern, but the cross-sectional profile does not reflect aerial image on wafer. Therefore, CD definition based on aerial image on wafer is preferable to the cross-sectional profile. We formulated a CD definition that reflects aerial image on wafer. In our definition, CD is called CDad. There are two types of CD measurement equipment: top view type such as CD-SEM, and transmitted light type such as deep-UV microscope. By simulation and experiment, we evaluated CD of top view and CD of deep-UV microscope to obtain CDad. The results show that CDad can be obtained with deep-UV microscope, but not to top view. Deep-UV microscope is available for CD measurement of 0.11 and 0.13 um generation masks.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane and Takashi Hirano "CD measurement for next-generation mask", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438378
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