Development of bilayered TaSiOx-HTPSM: I

Toshiaki Motonaga; M. Ohtsuki; Y. Kinase; H. Nakagawa; Toshifumi Yokoyama; Hiroshi Mohri; Junji Fujikawa; Naoya Hayashi

doi:10.1117/12.438337

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5 September 2001 Development of bilayered TaSiO_x-HTPSM: I

Toshiaki Motonaga, M. Ohtsuki, Y. Kinase, H. Nakagawa, Toshifumi Yokoyama, Hiroshi Mohri, Junji Fujikawa, Naoya Hayashi

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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438337
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

We developed a new shifter for half-tone phase shift masks (HTPSMs) in ArF and F₂ lithography, using a TaSiO_x film. We have adopted the bilayer structure, which consists of a TaSiO_x layer and a transmittance control layer (TCL), to make various transmittance blanks by controlling the thickness of each layers (without changing the film compositions) and to achieve lower transmittances at mask inspection wavelengths. Because we expected that the ratio of Si to Ta in TaSiO_x layer was an important parameter regarding defect quality, we decided the Si/Ta ratio for 6% transmittance ArF-HTPSM, high transmittance ArF-HTPSM and F₂-HTPSM, respectively, considering the inspection light transmittance. We sputtered 6-20% transmittance ArF HTPSM blanks and 9-13% transmittance F₂ HTPSM blanks and confirmed that the experimental transmittance and phase results fitted the optical simulation results well and the inspection light transmittances of all blanks were lowered successfully. TaSiO_x-HTPSM had good deposition stability (within plate and plate to plate). Furthermore, TaSiO_x-HTPSM showed excellent laser irradiation durability and practical chemical durability.

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Toshiaki Motonaga, M. Ohtsuki, Y. Kinase, H. Nakagawa, Toshifumi Yokoyama, Hiroshi Mohri, Junji Fujikawa, and Naoya Hayashi "Development of bilayered TaSiO_x-HTPSM: I", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438337

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