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5 September 2001 Development of bilayered TaSiOx-HTPSM: I
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001)
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
We developed a new shifter for half-tone phase shift masks (HTPSMs) in ArF and F2 lithography, using a TaSiOx film. We have adopted the bilayer structure, which consists of a TaSiOx layer and a transmittance control layer (TCL), to make various transmittance blanks by controlling the thickness of each layers (without changing the film compositions) and to achieve lower transmittances at mask inspection wavelengths. Because we expected that the ratio of Si to Ta in TaSiOx layer was an important parameter regarding defect quality, we decided the Si/Ta ratio for 6% transmittance ArF-HTPSM, high transmittance ArF-HTPSM and F2-HTPSM, respectively, considering the inspection light transmittance. We sputtered 6-20% transmittance ArF HTPSM blanks and 9-13% transmittance F2 HTPSM blanks and confirmed that the experimental transmittance and phase results fitted the optical simulation results well and the inspection light transmittances of all blanks were lowered successfully. TaSiOx-HTPSM had good deposition stability (within plate and plate to plate). Furthermore, TaSiOx-HTPSM showed excellent laser irradiation durability and practical chemical durability.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiaki Motonaga, M. Ohtsuki, Y. Kinase, H. Nakagawa, Toshifumi Yokoyama, Hiroshi Mohri, Junji Fujikawa, and Naoya Hayashi "Development of bilayered TaSiOx-HTPSM: I", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001);

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