5 September 2001 Dry etching of Cr layer and its loading effect
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438355
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
The Cr etch rate is affected by Cr density to be etched at the photomask and the Cr loading effect has become main obstacles to overcome for the next generation photomask process. Different mask-to-mask and within-mask pattern densities have made difficult to control the final CD (critical dimension). We have tested loading effect using binary Cr mask with ZEP7000 (3000 angstroms) photoresist. The loading effect was evaluated for the masks fabricated at the same process condition with the different mask-to-mask Cr loading and different within-mask Cr loading. The CD variations of dark field and clear field were observed and the phenomenological approach was proposed for the loading effect by some simplified equations.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyuk-Joo Kwon, D. S. Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Kyung Ho Park, and Soo-Hong Jeong "Dry etching of Cr layer and its loading effect", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438355; https://doi.org/10.1117/12.438355
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