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5 September 2001 High-productivity mask writer with broad operating range
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001)
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Photomask complexity increases rapidly as semiconductor devices continue to shrink and as optical proximity correction becomes commonplace. This trend stresses the performance of mask pattern generators due to the increase in both primary and subresolution features. However, the next-generation MEBES raster scan architecture is well-suited to the challenge of maintaining throughput regardless of increases in pattern complexity. In addition, this new system provides an operating envelope that is sufficiently broad to expose all practical resist materials with a fixed number of writing passes. Write time is independent of material sensitivity, which has the benefits of allowing high-dose processes to be optimized, and also of supporting a wide selection of chemically amplified resist candidates for critical mask patterning. The new system shows the promise of being extendible to the 70 nm technology generation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-Ho Baik, Varoujan Chakarian, Bob Dean, Maiying Lu, Robert J. Naber, Thomas H. Newman, Mark Wiltse, and Frank E. Abboud "High-productivity mask writer with broad operating range", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001);


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