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5 September 2001 Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001)
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
ArF lithography that is expected the candidate for next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12micrometers design-rule and beyond. For the next-generation lithography, the most important requirement for mask process is enough resolution and good pattern fidelity to generate various critical patterns, of which sizes are below 0.5micrometers main pattern including OPC patterns. In this paper we describe in terms of blank mask properties, mask making process and wafer performance of ArF attenuated Phase Shift Mask (att-OSM) using TiN/Si3N4(abbreviated as TiN/SiN) multi-layer for Next Generation Lithography (NGL). In view point of material, we have evaluated for the applicability of TiN/SiN multi-layer to ArF lithography as compared with non- stoichiometric MoSiON-based single-layer structure. In mask making process, we used Chemically Amplified Resist (CAR) process characteristics and Dry etching system for improvement of enough resolution and pattern fidelity. Also we have investigated wafer performance for ArF att-PSM in terms of process windows as compared with BIM (Binary Intensity Mask) in 120nm D/R real cell pattern and 100nm L/S(Line and Space)D/R pattern, respectively.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung-Han Nam, Lee-Ju Kim, Hyoung-Sup Jeong, Sang Woon Lee, In-Soo Lee, Cheol Shin, Hong-Seok Kim, L. Dieu, Seung-Weon Paek, Sang-Sool Koo, Sang-Man Bae, Young-Mog Ham, and Ki-Soo Shin "Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438396;

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