5 September 2001 Laser proximity correction for advanced mask manufacturing
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438377
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
In this paper, we present a fully automatic mask laser proximity effect (LPE) correction in compliance with existing mask data preparation (MDP) flow to enable ALTA3000 0.18micrometers mask production capability that is at least one generation beyond its current application. The production- proven OPC methodology in wafer houses for many years has been integrated with CATS, the de facto standard product for preparing IC data for mask manufacturing, to correct mask process distortion. Excellent LPE correction results have been obtained repeatedly on 0.18micrometers test and production maks on an ALTA3000 that was originally designed for 0.35micrometers production.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Chang, Michael Chang, A. Yu, A. Yu, J. Chen, J. Chen, J. Lin, J. Lin, Jason H. Huang, Jason H. Huang, F. Hsu, F. Hsu, Hua-Yu Liu, Hua-Yu Liu, } "Laser proximity correction for advanced mask manufacturing", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438377; https://doi.org/10.1117/12.438377
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