5 September 2001 Mask blanks warpage at 130-nm node
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438385
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Semiconductor device technology is now making transition from 150 to 130 nm node. Lithography tools for 130 node that employ KrF and ArF as light sources have finished being developed. Also, mask drawing and inspection tools are ready. However, for actual processes, there is an issue to be solved from realistic DOF or overlay accuracy acquisition point of view.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyoshi Deguchi, Nobuyoshi Deguchi, Kazunori Iwamoto, Kazunori Iwamoto, Izumi Tsukamoto, Izumi Tsukamoto, Ryo Takai, Ryo Takai, Mitsuru Hiura, Mitsuru Hiura, } "Mask blanks warpage at 130-nm node", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438385; https://doi.org/10.1117/12.438385

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