Paper
5 September 2001 Optical inspection of EUV and SCALPEL reticles
Author Affiliations +
Abstract
Next Generation Lithography (NGL) reticle inspection poses some difficult problems. The masks dictate that reflection images, rather than the more usual transmission images, be used for inspection. The smaller linewidths and feature sizes of NGL will require the optical inspection images to have better resolution than has been needed for conventional masks. In this paper we present inspection images and inspection results for EUV and EPL programmed defect test reticles using both UV and DUV reticle inspection systems. Our emphasis has been on providing feedback to the mask manufacturing process to help optimize the inspectability of NGL masks, as well as determining whether the required sensitivity for the 100 nm and 70 nm nodes can be met with optical inspection. Simulated and actual images of NGL masks have proven useful in identifying the important factors in optimizing image contrast. We have found that image contrast varies markedly with inspection wavelength, and that the inspection wavelength must be considered in the design of NGL masks if optimum defect sensitivity is to be obtained. This research was sponsored in part by NIST-ATP and KLA-Tencor Cooperative Agreement #70NANB8H44024.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donald W. Pettibone and Stanley E. Stokowski "Optical inspection of EUV and SCALPEL reticles", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438384
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CITATIONS
Cited by 2 patents.
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KEYWORDS
Inspection

Photomasks

Deep ultraviolet

Ultraviolet radiation

Extreme ultraviolet

Reflectivity

Reticles

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