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5 September 2001 Performance of improved e-beam lithography system JBX-9000MVII
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438404
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
An electron beam mask writing system JBX-9000MV for 150- 180nm technology node masks was developed by JEOL Ltd. and its design concept, technologies introduced and results of initial evaluation were reported in 1998. We have improved this system to cope with the production of masks for 130nm technology node. Some of the new technologies developed for the improvement of writing accuracy, especially CD accuracy, and the results are reported in this paper.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Komagata, Yasutoshi Nakagawa, Nobuo Gotoh, and Kazumitsu Tanaka "Performance of improved e-beam lithography system JBX-9000MVII", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438404
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