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5 September 2001 Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438364
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
Key issues of x-ray mask fabrication are EB mask writer and writing process on thin membrane. This paper shows precise x-ray mask writing technology using 100-kV EB writer on x- ray membrane mask. After several improvements of writing process including non-deformation mask holding and precise temperature control, absolute image placement accuracy within 10nm was obtained for giga-bit level ULSI pattern. Also the delineation characteristics of membrane mask writing using high-energy electron-beam including proximity effect and fogging effect were evaluated. Then accurate critical dimension control within 8 nm was achieved for such high density ULSI patterns. These good results satisfied the mask precision requirements for 100-nm node generation and below. So we fabricated precise x-ray masks having fine patterns of sub 100-nm node device for evaluation of advanced x-ray stepper.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshinori Nakayama, Hiroshi Watanabe, Shinji Tsuboi, Hajime Aoyama, Mizunori Ezaki, Yasuji Matsui, Tetsuo Morosawa, and Masatoshi Oda "Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438364
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