5 September 2001 Resolution improvement of chemical-amplification resist using process-induced effect correction
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438359
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Abstract
Resolution comparison of a CAR (positive resist) and ZEP- 7000 was investigated for 50 kV e-beam machine and dry etching process. The CAR is superior to ZEP-7000 in view of resist profile, while it is inferior in view of CD variation, after Cr dry etching. The etching results were improved using thin resist, optimizing the etching condition and process effect correction. The best performance was obtained form e-beam proximity correction. It is difficult to apply this model to a real device since it has model errors and inconvenience in data handling. Among the activities for the improvements, etch condition optimization is the most effective. A pattern fidelity issue such as edge roughness and line-end shortening remains even with a CD linearity improvement.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ji-Hyeon Choi, Ji-Hyeon Choi, Chang-Hwan Kim, Chang-Hwan Kim, Jeong-Yun Lee, Jeong-Yun Lee, Seong-Yong Moon, Seong-Yong Moon, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, Jung-Min Sohn, Jung-Min Sohn, } "Resolution improvement of chemical-amplification resist using process-induced effect correction", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438359; https://doi.org/10.1117/12.438359
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