5 September 2001 Simulation of EUVL mask defect printability
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438371
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
In this study, mask simulations were performed at the extreme ultraviolet wavelength of 13.5nm to determine criteria for the uniformity of the reflectivity of mask blanks and the printability of clear- and opaque-type absorber defects in order to obtain satisfactory lithographic performance. The simulations were performed on typical 70-nm line-and-space patterns for different flares and numerical apertures (NA) of the illumination. The simulation results for a numerical aperture of 0.1 and 18% flare showed that local variations in the reflectivity of multilayer mask blanks must be kept below 1% for practical lithography. It was also found that clear flank defects are even less printable than opaque ones. The results indicate that there is a large enough process margin for the repair of opaque flank defects, though the possibility still exists that the reflectivity of multilayer may drop during repair.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manhyoung Ryoo, Manhyoung Ryoo, Masaaki Ito, Masaaki Ito, Byoung Taek Lee, Byoung Taek Lee, Taro Ogawa, Taro Ogawa, Shinji Okazaki, Shinji Okazaki, } "Simulation of EUVL mask defect printability", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); doi: 10.1117/12.438371; https://doi.org/10.1117/12.438371

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