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5 September 2001 Simulation of image quality issues at low k1 for 100-nm lithography
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Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001)
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan
Mask quality issues in pushing lithography to features below 0.5(lambda) /NA are identified and quantified through simulation of mask interactions and images. Guidelines summarize the results from detailed studies of aberrations, phase-shift mask image imbalance, 3D phase defects and EUV buried defects. Programmed-probe based aberration targets are extended to distinguish both even and odd lens aberrations and their mask tolerance requirements are assessed. Complex diffraction coefficients and results for cross-talk simulation are used to set guidelines for phase-shifting mask design. An antireflection coating (50 nm MoO3) is shown to reduce cross-talk between trenches. Type, location and size data are given for 3D phase-defects and the end regions of lines are shown to be more vulnerable to CD variation. Results for buried 3D Gaussian defects in EUV multilayers show a worst isolated defect size of half of the resolution and that 2nm high defects of any size can be tolerated.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew R. Neureuther, Konstantinos Adam, Shoji Hotta, Thomas V. Pistor, Garth Robins, and Yunfei Deng "Simulation of image quality issues at low k1 for 100-nm lithography", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001);

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